Pulsed Electron Beam Annealing of Arsenic-implantation Damage in Silicon

A SPIRE-300 pulsed electron beam processor has been used t o recrystallize (100) and (111) 15 Si wafers implanted with As (140 keV 10 cm-2). The machine parameters have been selected t o obtain an electron energy deposition profik convenient for melting of the silicon surface 2 down t o 1 J/cm . The best regrawth layer quality and As incorporation wereobtained with electron energy densities in the range 1.2 1.4 J/cmL. No significant orientation ef fects have been detected . , but a degradation upper limit of about 1.6 J/cmL was clearly observed for both orientations. Spreading of the As profik was consistent with the melting model. However, significant As losses during the melt stage might be responsible for the drop in the surface concentrations experirnen tally measured compared t o results of a simple di *ion model.